![]() ![]() The cradle accommodates powders, thin-films, and wafers up to 70 mm in diameter and 25 mm in height, weighing up to 250 g. Sample positioning: motorized Chi(tilt) and Phi(rotation) rotations and Z translations, manual X Y stage. OD, 1D and 2D measurements in step, continuous and snapshot modes.Large area, 38.4 x 38.4 mm Pixel size 75 x 75 micron Specific Hardware and Software Components Powders can’t be analyzed at high temperatures. Temperature-induced phase transition investigations, texture measurements, stress, profile analysis, powder diffraction, grazing incidence, and high resolution studies. High-temperature, orientation sensitive XRD.Also measures multilayer interface quality and periodicity structure evaluation. Measures film thickness, roughness (interface and surface), and density of films (2 nm – 500 nm). In-plane lattice parameters and crystal orientation can be determined. In-plane diffraction is a technique for measuring the crystal planes that are oriented perpendicular to the surface. Grazing Incidence In-Plane XRD (GIIXD).Enhance diffracted signal from polycrystalline thin films and examine structural variations as a function of depth by precisely controlling incident angle and therefore the penetration depth of x-rays. This actually provides a measure of strain in the sample from which the stress can then be calculated by plotting the change in d-spacing against sin 2psi. Stress is determined by recording the angular shift of a given Bragg reflection as a function of sample tilt (psi). A pole figure is measured at a fixed scattering angle (constant d spacing) and consists of a series of Phi-scans (in- plane rotation around the center of the sample) at different tilt or Chi angles and measures preferred crystallite orientation. Narrow scans of reciprocal lattice points are performed for various diffractometer settings and the scattered intensity can be plotted in a 2-dimensional frame. Reciprocal Space Maps. This is a technique for analyzing epitaxial (and similar) thin films.The data is recorded as a rocking curve and can be modeled and fitted to reveal structural details of the epitaxial layer. These means the difference in diffraction angle for the layer and substrate is very small and requires the capability to resolve Bragg peaks on an arc second scale. Rocking Curves. This is a method for analyzing epitaxial structures for which the layer and substrate are almost perfect single crystals.Total scattering analysis: Bragg Diffraction, Pair-Distribution Function (PDF).Residual stress analysis, texture and pole figures.X-Ray reflectometry, Grazing Incidence Diffraction (GID), In-Plane Diffraction, High-resolution XRD, GISAXS, GI-Stress analysis, crystal orientation analysis.Phase identification and quantification, structure determination and refinement, micro-strain and crystallite size analysis. ![]()
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